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P1160ZT - N-Channel Transistor

Download the P1160ZT datasheet PDF. This datasheet also covers the P1160ZT-NIKO variant, as both devices belong to the same n-channel transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (P1160ZT-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number P1160ZT
Manufacturer NIKO-SEM
File Size 268.88 KB
Description N-Channel Transistor
Datasheet download datasheet P1160ZT Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NIKO-SEM N-Channel High Voltage Mode P1160ZT Field Effect Transistor TO-220 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 390mΩ ID 11A D G S ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C VDS VGS ID IDM IAS EAS Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Case RJc Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150°C.
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