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NIKO-SEM
N-Channel Enhancement Mode
P1120ETFB
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
280mΩ
ID 11A
D
G S
ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 ° C TC = 100 ° C
L = 1mH TC = 25 ° C TC = 100 ° C
VDS VGS
ID
IDM IAS EAS PD
TJ, Tstg
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RJA
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
TYPICAL
1 23
1: GATE 2: DRAIN 3: SOURCE
LIMITS 200 ±20 11 6.3 33 13 84.5 31 12.
P1120ETFB Datasheet
