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P0860ETFS - N-Channel MOSFET

Download the P0860ETFS datasheet PDF. This datasheet also covers the P0860ETF variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (P0860ETF-NIKOSEM.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM N-Channel Enhancement Mode P0860ETF:TO-220F P0860ETFS:TO-220FS Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 1.05Ω 8A D G S ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current 3 Avalanche Energy3 VDS VGS TC = 25 °C ID TC = 100 °C IDM IAS EAS Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 1 23 1. GATE 2. DRAIN 3. SOURCE LIMITS 600 ±30 8 5 25 3.5 61.