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NIKO-SEM
N-Channel Enhancement Mode
P0860ETF:TO-220F P0860ETFS:TO-220FS
Field Effect Transistor
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
600V
1.05Ω
8A
D
G S
ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1 Avalanche Current 3 Avalanche Energy3
VDS VGS TC = 25 °C ID TC = 100 °C IDM IAS EAS
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
1 23
1. GATE 2. DRAIN 3. SOURCE
LIMITS 600 ±30 8 5 25 3.5 61.
P0860ETF Datasheet
