S6R8008C1A Datasheet | NETSOL

Features - Fast Access Time 8, 10, 12, 15ns(Max) - CMOS Low Power Dissipation Standby (TTL) : 25m A (Max.) (CMOS) : 15m A (Max.) Operating : 80m A (8ns, Max.) 70m A (10ns, Max.) - Wide range of Power Supply - S6R80xx W1A : 1.65V ~ 3.6V Power Supply - Single 5.0 ±0.5V Power Supply - S6R80xx C1A : 5.0 ±0.5V Power Supply - TTL patible Inputs and Outputs - Fully Static Operation, No Clock or Refresh required - Three State Outputs - Data Byte Control(x16 Mode) LB : I/O0~ I/O7, UB : I/O8~ I/O15 - Standard 44TSOP2 and 48FBGA Package Pin Configuration. - Operating in mercial and Industrial Temperature range. General Description The S6R8016W(C)1A and S6R8008W(C)1A are a 8,388,608bit high-speed Static Random Access Memory organized as 512K (1M) words by 16(8) bits. The S6R8016W(C)1A (S6R8008W(C)1A) uses 16(8) mon input and output lines and have an output enable pin which operates faster than address access time at read cycle. And S6R8016W(C)1A allows that lower and upper byte access by data byte control(UB, LB). The device is fabricated using advanced CMOS process,6-TR based cell technology and designed for highspeed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The S6R8016W1A and S6R8008W1A are packaged in a 400mil 44-pin TSOP2 and 48FBGA. The S6R8016C1A and S6R8008C1A are packaged in a 400mil 44-pin TSOP2. 8Mb Asynchronous FAST SRAM Ordering Information (512Kx16) Density Org. Part Number Vcc (V) Speed t...