S6R2008W1A
Features
- Fast Access Time 8, 10, 12, 15ns(Max)
- CMOS Low Power Dissipation
Standby (TTL) : 10m A (Max.) (CMOS) : 6m A (Max.)
Operating : 35m A (8ns, Max.) 30m A (10ns, Max.)
- Single 3.3 ±0.3V or 5.0 ±0.5V Power Supply
- S6R20xx V1A : 3.3 ±0.3V Power Supply
- S6R20xx C1A : 5.0 ±0.5V Power Supply
- Wide range of Power Supply
- S6R20xx W1A : 1.65V ~ 3.6V Power Supply
- TTL patible Inputs and Outputs
- Fully Static Operation, No Clock or Refresh required
- Three State Outputs
- Data Byte Control(x16 Mode)
LB : I/O0~ I/O7, UB : I/O8~ I/O15
- Standard 44 TSOP2, 36FBGA and 48FBGA Package Pin
Configuration
- Operating in mercial and Industrial Temperature range.
General Description
The S6R2016(V/C/W)1A and S6R2008(V/C/W))1A are a 2,097,152-bit high-speed Static Random Access Memory organized as 128K (256K) words by 16(8) bits. The S6R2016(V/C/ W)1A (S6R2008(V/C/W)1A) uses 16(8) mon input and output lines and have an output enable pin which operates faster than address access time at read cycle....
