• Part: UPD703230A
  • Description: 32-Bit Single-Chip Microcontroller
  • Category: Microcontroller
  • Manufacturer: NEC
  • Size: 4.63 MB
Download UPD703230A Datasheet PDF
NEC
UPD703230A
UPD703230A is 32-Bit Single-Chip Microcontroller manufactured by NEC.
- Part of the UPD703230 comparator family.
User’s Manual V850ES/Fx2 32-Bit Single-Chip Microcontroller Hardware µPD703230(A) µPD70(F)3231(A) µPD703230(A1) µPD70(F)3231(A1) µPD703230(A2) µPD70(F)3231(A2) µPD70(F)3232(A) µPD70(F)3233(A) µPD70(F)3232(A1) µPD70(F)3233(A1) µPD70(F)3232(A2) µPD70(F)3233(A2) µPD70(F)3234(A) µPD70(F)3235(A) µPD70F3236(A) µPD70(F)3234(A1) µPD70(F)3235(A1) µPD70F3236(A1) µPD70(F)3234(A2) µPD70(F)3235(A2) µPD70F3236(A2) µPD70F3237(A) µPD70F3238(A) µPD70F3239(A) µPD70F3237(A1) µPD70F3238(A1) µPD70F3239(A1) µPD70F3237(A2) µPD70F3238(A2) µPD70F3239(A2) Document No. U17830EE1V0UM00 Date Published November 2005-NS CP(K) Printed in Europe [MEMO] User’s Manual U17830EE1V0UM00 NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the CMOS device stays in the area between VIL (MAX) and VIH (MIN) due to noise, etc., the device may malfunction. Take care to prevent chattering noise from entering the device when the input level is fixed, and also in the transition period when the input level passes through the area between VIL (MAX) and VIH (MIN). 2 HANDLING OF UNUSED INPUT PINS Unconnected CMOS device inputs can be cause of malfunction. If an input pin is unconnected, it is possible that an internal input level may be generated due to noise, etc., causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND via a resistor if there is a possibility that it will be an output pin. All handling related to unused pins must be judged separately for each device and according to related specifications governing the device. 3 PRECAUTION AGAINST ESD A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop...