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UPD45128441 Datasheet

Manufacturer: NEC (now Renesas Electronics)

This datasheet includes multiple variants, all published together in a single manufacturer document.

UPD45128441 datasheet preview

Datasheet Details

Part number UPD45128441
Datasheet UPD45128441 UPD Datasheet (PDF)
File Size 1.08 MB
Manufacturer NEC (now Renesas Electronics)
Description 128M-bit Synchronous DRAM 4-bank/ LVTTL
UPD45128441 page 2 UPD45128441 page 3

UPD45128441 Overview

The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive edge of the clock. The synchronous DRAMs are patible with Low Voltage TTL (LVTTL).

UPD45128441 Key Features

  • Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
  • Pulsed interface
  • Possible to assert random column address in every cycle
  • Quad internal banks controlled by BA0(A13) and BA1(A12)
  • Byte control (×16) by LDQM and UDQM
  • Programmable Wrap sequence (Sequential / Interleave)
  • Programmable burst length (1, 2, 4, 8 and full page)
  • Programmable /CAS latency (2 and 3)
  • Automatic precharge and controlled precharge
  • CBR (Auto) refresh and self refresh
NEC (now Renesas Electronics) logo - Manufacturer

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