UPD4264405LE-A50 Datasheet | NEC

DATA SHEET MOS INTEGRATED CIRCUIT µPD4264405, 42S65405, 4265405 64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, EDO Description The µPD4264405, 42S65405, 4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation. Besides, the µPD42S65405 can execute CAS before RAS self refresh. These are packaged in 32-pin plastic TSOP (II) and 32-pin plastic SOJ. Features - EDO (Hyper page mode) - 16,777,216 words by 4 bits organization - Single +3.3 V ± 0.3 V power supply - Fast access and cycle time Part number Power consumption Active (MAX.) 360 m W Access time (MAX.) 50 ns R/W cycle time (MIN.) 84 ns EDO (Hyper page mode) cycle time (MIN.) 20 ns µPD4264405-A50 µPD42S65405-A50, 4265405-A50 µPD4264405-A60 µPD42S65405-A60, 4265405-A60 468 m W 324 m W 396 m W 60 ns 104 ns 25 ns - The µPD42S65405 can execute CAS before RAS self refresh. Part number Refrech cycle 4,096 cycles/128 ms Refresh RAS only refresh, Normal read/write, CAS before RAS self refresh, CAS before RAS refresh, Hidden refresh RAS only refresh, Normal read/write CAS before RAS refresh, Hidden refresh RAS only refresh, Normal read/write, CAS before RAS refresh, Hidden refresh Power consumption at standby (MAX.) 0.72 m W (CMOS level input) 1.8 m W (CMOS level input) µPD42S65405 µPD4264405 8,192 cycles/64 ms 4,096 cycles/64 ms µPD4265405 4,096 cycles/64 ms The information in this document is subject to change without notice. Document No. M10856EJ6V0DS00 (6th edition) Date Published September 1997 N Printed in Japan The mark shows major revised points. © µPD4264405, 42S65405, 4265405 Ordering...