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UPC8179TB Datasheet SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

Manufacturer: NEC (now Renesas Electronics)

General Description

The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications.

This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wideband matched IC.

This low current amplifier operates on 3.0 V.

Overview

DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8179TB SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE.

Key Features

  • Low current consumption.
  • Supply voltage.
  • High efficiency : ICC = 4.0 mA TYP. @ VCC = 3.0 V : VCC = 2.4 to 3.3 V : PO (1 dB) = +3.0 dBm TYP. @ f = 1.0 GHz PO (1 dB) = +1.5 dBm TYP. @ f = 1.9 GHz PO (1 dB) = +1.0 dBm TYP. @ f = 2.4 GHz.
  • Power gain : GP = 13.5 dB TYP. @ f = 1.0 GHz GP = 15.5 dB TYP. @ f = 1.9 GHz GP = 15.5 dB TYP. @ f = 2.4 GHz.
  • Excellent isolation : ISL = 44 dB TYP. @ f = 1.0 GHz ISL = 42 dB TYP. @ f = 1.9 GHz ISL = 41 dB TYP. @ f = 2.