Datasheet4U Logo Datasheet4U.com

UPC8100GR - SILICON UP/DOWN CONVERTERS IC FOR 800 MHz to 900 MHz MOBILE COMMUNICATIONS

Description

communications, mainly CT2.

This IC consists of upconverter and downconverter, which are packaged in 20 pin SSOP.

Features

  • Operating frequency.
  • fRF = 800 MHz to 900 MHz, fIF = 50 MHz to 150 MHz, fLo = 650 MHz to 1 050 MHz.
  • Upconverter and downconverter are integrated in 1 chip.
  • 20 pin SSOP suitable for high-density surface mounting.
  • Wide operating voltage VCC = 2.7 to 4.5 V.
  • Equipped with Power Save Function.
  • Excellent linearity.

📥 Download Datasheet

Datasheet Details

Part number UPC8100GR
Manufacturer NEC
File Size 141.01 KB
Description SILICON UP/DOWN CONVERTERS IC FOR 800 MHz to 900 MHz MOBILE COMMUNICATIONS
Datasheet download datasheet UPC8100GR Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
UPC812G2 Operational Amplifier ETC
UPC814C TTL Dual Operational Amplifier ETC
UPC817 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER UTC
UPC8172TB SILICON RFIC 2.5 GHz FREQUENCY UP-CONVERTER CEL
uPC8179TK SILICON MMIC LOW CURRENT AMPLIFIER Renesas

Other Datasheets by NEC

Part Number Description
UPC8101GR 3 V/ SILICON MMIC 150 MHz QUADRATURE MODULATOR
UPC8102T RF AMPLIFIER IC FOR 150 MHz TO 330 MHz PAGER SYSTEM
UPC8103T MIXER + OSCILLATOR IC FOR PAGER SYSTEM
UPC8104GR 1 GHz DIRECT QUADRATURE MODULATOR FOR DIGITAL MOBILE COMMUNICATION
UPC8105GR UP-CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

Full PDF Text Transcription

Click to expand full text
DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8100GR SILICON UP/DOWN CONVERTERS IC FOR 800 MHz to 900 MHz MOBILE COMMUNICATIONS DESCRIPTION µPC8100GR is a silicon monolithic integrated circuit designed as up/down converters for 800 MHz to 900 MHz mobile communications, mainly CT2. This IC consists of upconverter and downconverter, which are packaged in 20 pin SSOP. Quadrature modulator IC (µPC8101GR) is also available as for kit-use with this IC. So, these pair devices contribute to make RF block small, high-performance and low power-consumption. This product is manufactured using NEC’s 20 GHz f T NESAT™III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes.
Published: |