• Built-in the saturation protection circuit of the output transistor.
• The capability of output current is 1 A
• High accuracy of output voltage. | ∆ VO | ≤ ±2 % (TJ = 25 ˚C) | ∆ VO | ≤ ±3 % (0 ˚C ≤ TJ ≤ 125 ˚C)
• Low dropout voltage. VDIF ≤ 1 V (IO ≤ 1 A, TJ ≤ 125 ˚C)
• Built-in overcurrent prote.