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UPC1678GV - 2 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER

General Description

The µPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications.

Due to +17.5 dBm TYP.

output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems.

Key Features

  • Supply voltage.
  • Saturated output power.
  • Wideband response.
  • Power gain.
  • Isolation : VCC = 4.5 to 5.5 V : PO(sat) = +17.5 dBm TYP. @ f = 500 MHz with external inductor : fu = 2.0 GHz TYP. @ 3 dB bandwidth : GP = 23 dB TYP. @ f = 500 MHz : ISL = 35 dB TYP. @ f = 500 MHz.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1678G 5 V-BIAS, +17.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER DESCRIPTION The µPC1678G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17.5 dBm TYP. output at 2 GHz, this IC is recommendable for transmitter stage amplifier of L BAND wireless communication systems. This IC is packaged in 8-pin plastic SOP. This IC is manufactured using NEC’s 20 GHz fT NESAT™IV silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.