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UPA808T - NPN Transistor

Key Features

  • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz.
  • A Super Mini Mold Package Adopted.
  • Built-in 2 Transistors (2 × 2SC5184) 2.0±0.2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON TRANSISTOR µPA808T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD FEATURES • Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5184) 2.0±0.2 PACKAGE DRAWINGS (Unit: mm) 2.1±0.1 1.25±0.1 1.3 ORDERING INFORMATION PART NUMBER QUANTITY Loose products (50 PCS) Taping products (3 KPCS/Reel) PACKING STYLE Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape. 0.65 2 µPA808T µPA808T-T1 0.65 3 0.9±0.1 pcs.