UPA808T
UPA808T is NPN Transistor manufactured by NEC.
DATA SHEET
SILICON TRANSISTOR
µPA808T
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD
Features
- Low Noise NF = 1.3 d B TYP. @VCE = 2 V, IC = 3 m A, f = 2 GHz NF = 1.3 d B TYP. @VCE = 1 V, IC = 3 m A, f = 2 GHz
- A Super Mini Mold Package Adopted
- Built-in 2 Transistors (2 × 2SC5184)
2.0±0.2
PACKAGE DRAWINGS (Unit: mm)
2.1±0.1 1.25±0.1
ORDERING INFORMATION
PART NUMBER QUANTITY Loose products (50 PCS) Taping products (3 KPCS/Reel) PACKING STYLE Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape.
µPA808T µPA808T-T1
0.9±0.1...
