• Part: UPA679TB
  • Description: N/P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
  • Category: Transistor
  • Manufacturer: NEC
  • Size: 141.20 KB
Download UPA679TB Datasheet PDF
NEC
UPA679TB
UPA679TB is N/P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING manufactured by NEC.
DESCRIPTION The µ PA679TB is a switching device, which can be driven directly by a 2.5 V power source. The µ PA679TB features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES - 2.5 V drive available - Low on-state resistance N-ch RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.30 A) RDS(on)3 = 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.15 A) P-ch RDS(on)1 = 1.45 Ω MAX. (VGS = - 4.5 V, ID = - 0.20 A) RDS(on)3 = 2.98 Ω MAX. (VGS = - 2.5 V, ID = - 0.15 A) - Two MOS FET circuits in same size package as SC-70 PACKAGE DRAWING (Unit: mm) 0.2 -0 +0.1 0.15 -0.05 +0.1 1.25 ±0.1 2.1 ±0.1 4 0 to 0.1 ORDERING INFORMATION PART NUMBER PACKAGE SC-88 (SSP) 3 0.7 0.9 ±0.1 µ PA679TB Marking: YA 1.3 2.0 ±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 20 / - 20 ±12 / m12 ±0.35 / m0.25 ±1.40 / m1.00 0.2 150 - 55 to +150 V V A A W °C °C PIN CONNECTION (Top View) 6 5...