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UPA2680T1E - MOSFET

Description

The μ PA2680T1E is a switching device, which can be driven directly by a 4.5 V power source.

Features

  • a low on-state resistance and excellent switching characteristics and a low forward voltage Schottky Barrier Diode, and is suitable for.

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Datasheet Details

Part number UPA2680T1E
Manufacturer NEC
File Size 234.72 KB
Description MOSFET
Datasheet download datasheet UPA2680T1E Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com DATA SHEET MOSFET WITH SCHOTTKY BARRIER DIODE μ PA2680T1E N-CHANNEL MOSFET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The μ PA2680T1E is a switching device, which can be driven directly by a 4.5 V power source. The μ PA2680T1E incorporates a MOSFET which features a low on-state resistance and excellent switching characteristics and a low forward voltage Schottky Barrier Diode, and is suitable for applications such as DC/DC converter of portable machine and so on. PIN CONNECTION (Top View) 6 5 4 FEATURES • 4.5 V drive available MOSFET • Low on-state resistance MOSFET RDS(on)1 = 38 mΩ TYP. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 44 mΩ TYP. (VGS = 4.5 V, ID = 3.0 A) • Low forward voltage Schottky Barrier Diode VF = 0.36 V TYP. (IF = 1.
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