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UPA1900 - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description

The µPA1900 is a switching device which can be driven directly by a 2.5 V power source.

Key Features

  • a low on-state resistance and excellent switching characteristics, and is suitable for.

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Datasheet Details

Part number UPA1900
Manufacturer NEC
File Size 61.26 KB
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet UPA1900 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1900 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1900 is a switching device which can be driven directly by a 2.5 V power source. The µPA1900 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 2.8 ±0.2 PACKAGE DRAWING (Unit : mm) 0.32 +0.1 –0.05 0.65–0.15 +0.1 0.16+0.1 –0.06 6 5 4 1.5 0 to 0.1 1 2 3 FEATURES • Can be driven by a 2.5 V power source • Low on-state resistance RDS(on)1 = 35 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 38 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A) RDS(on)3 = 45 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A) 0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 ±0.