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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1900
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The µPA1900 is a switching device which can be driven directly by a 2.5 V power source. The µPA1900 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
2.8 ±0.2
PACKAGE DRAWING (Unit : mm)
0.32 +0.1 –0.05
0.65–0.15
+0.1
0.16+0.1 –0.06
6
5
4
1.5
0 to 0.1
1 2 3
FEATURES
• Can be driven by a 2.5 V power source • Low on-state resistance RDS(on)1 = 35 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 38 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A) RDS(on)3 = 45 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A)
0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 ±0.