• Part: UPA1810
  • Description: P-CHANNEL MOS FIELD EFFECT TRANSISTOR
  • Category: Transistor
  • Manufacturer: NEC
  • Size: 62.75 KB
Download UPA1810 Datasheet PDF
NEC
UPA1810
UPA1810 is P-CHANNEL MOS FIELD EFFECT TRANSISTOR manufactured by NEC.
DESCRIPTION The µPA1810 is a switching device which can be driven directly by a 2.5 V power source. The µPA1810 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit : mm) 5 1, 5, 8 : Drain 2, 3, 6, 7: Source 4 : Gate 1.2 MAX. 1.0±0.05 0.25 ° 3° +5 - 3° FEATURES - Can be driven by a 2.5 V power source - Low on-state resistance RDS(on)1 = 55 mΩ MAX. (VGS = - 4.5 V, ID = - 2.0 A) RDS(on)2 = 60 mΩ MAX. (VGS = - 4.0 V, ID = - 2.0 A) RDS(on)3 = 100 mΩ MAX. (VGS = - 2.5 V, ID = - 2.0 A) 1 4 0.1±0.05 0.5 0.6 +0.15 - 0.1 0.145 ±0.055 3.15 ±0.15 3.0 ±0.1 6.4 ±0.2 4.4 ±0.1 1.0 ±0.2 ORDERING INFORMATION PART NUMBER PACKAGE Power TSSOP8 0.65 0.27 +0.03 - 0.08 0.8 MAX. µPA1810GR-9JG 0.10 M ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 Note2 EQUIVALENT CIRCUIT - 12 - 10/+5 ±4.0 ±16 2.0 150 - 55 to +150 V V A A W °C °C Gate Protection Diode Source Gate Drain VDSS VGSS ID(DC) ID(pulse) PT Tch...