Description
This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management of notebook computers.
Features
- Low On-Resistance RDS(on)1 = 27 mΩ Max. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 50 mΩ Max. (VGS = 4 V, ID = 3.5 A).
- Low Input Capacitance
1.44 1.8 MAX. 1 5.37 MAX. +0.10.
- 0.05
1, 2, 3 ; Source ; Gate 4 5, 6, 7, 8 ; Drain
4
6.0 ±0.3 4.4 0.8
Ciss = 820 pF Typ.
- Built-in G-S Protection Diode.
- Small and Surface Mount Package (Power SOP8)
0.15
0.05 MIN. 0.5 ±0.2 0.10
1.27 0.78 MAX. 0.40 +0.10.
- 0.05 0.12 M.
UPA1700A Datasheet
