UPA1700A Overview
Key Specifications
Description
This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management of notebook computers. DIMENSIONS (in millimeter).
Key Features
- Low On-Resistance RDS(on)1 = 27 mΩ Max. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 50 mΩ Max. (VGS = 4 V, ID = 3.5 A)
- Built-in G-S Protection Diode
