• Low On-Resistance RDS(on)1 = 27 mΩ Max. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 50 mΩ Max. (VGS = 4 V, ID = 3.5 A)
• Low Input Capacitance
1.44 1.8 MAX. 1 5.37 MAX.
+0.10
–0.05
1, 2, 3 ; Source ; Gate 4 5, 6, 7, 8 ; Drain
4
6.0 ±0.3 4.4 0.8
Ciss = 820 pF Typ.
• Built-in G-S Protection Diode
• Smal.