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PS2561BL1-1 - DIP PHOTOCOUPLER

Download the PS2561BL1-1 datasheet PDF. This datasheet also covers the PS2561B-1 variant, as both devices belong to the same dip photocoupler family and are provided as variant models within a single manufacturer datasheet.

Description

The PS2561B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.

The PS2561B-1 is in a plastic DIP (Dual In-line Package) and the PS2561BL-1 is lead bending type (Gull-wing) for surface mount.

Features

  • Operating ambient temperature: 110°C.
  • High Isolation voltage (BV = 5 000 Vr. m. s. ).
  • High collector to emitter voltage (VCEO = 80 V).
  • High current transfer ratio (CTR = 200% TYP. ).
  • High-speed switching (tr = 3 μs TYP. , tf = 5 μs TYP. ).
  • Ordering number of taping product: PS2561BL-1-E3, E4, F3, F4 : PS2561BL2-1-E3, E4.
  • Pb-Free product.
  • Safety standards.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PS2561B-1_NEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PS2561BL1-1
Manufacturer NEC
File Size 215.55 KB
Description DIP PHOTOCOUPLER
Datasheet download datasheet PS2561BL1-1 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET www.DataSheet4U.com PHOTOCOUPLER PS2561B-1,PS2561BL-1 PS2561BL1-1,PS2561BL2-1 DIP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 110°C −NEPOC Series− DESCRIPTION The PS2561B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The PS2561B-1 is in a plastic DIP (Dual In-line Package) and the PS2561BL-1 is lead bending type (Gull-wing) for surface mount. The PS2561BL1-1 is lead bending type for long creepage distance. The PS2561BL2-1 is lead bending type for long creepage distance (Gull-wing) for surface mount. FEATURES • Operating ambient temperature: 110°C • High Isolation voltage (BV = 5 000 Vr.m.s.) • High collector to emitter voltage (VCEO = 80 V) • High current transfer ratio (CTR = 200% TYP.
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