NP80N055NLE fet equivalent, n-channel power mos fet.
* Channel temperature 175 degree rated
* Super low on-state resistance
RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) .
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
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