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NE8500200 - 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

Description

The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices.

Each packaged device has an input lumped element matching network.

NE8500200 is the six-cells recessed gate chip used in ‘95’ package.

Features

  • Class A operation.
  • High power output.
  • High reliability 110 100 100 240.

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Datasheet Details

Part number NE8500200
Manufacturer NEC
File Size 48.93 KB
Description 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
Datasheet download datasheet NE8500200 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network. NE8500200 is the six-cells recessed gate chip used in ‘95’ package. The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device has a PHS. (Plated Heat Sink) NEC’s strigent quality assurance and test procedures assure the highest reliability and performance.