Full PDF Text Transcription for NE76084S (Reference)
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NE76084S. For precise diagrams, and layout, please refer to the original PDF.
Noise Figure, NF (dB) Associated Gain, GA (dB) LOW NOISE L TO Ku BAND GaAs MESFET NE76084S FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • HIGH ASSOCIATED GAI...
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• LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • HIGH ASSOCIATED GAIN GA = 9 dB TYP at f = 12 GHz • LG = 0.3 µm, WG = 280 µm • LOW COST METAL/CERAMIC PACKAGE • ION IMPLANTATION • AVAILABLE IN TAPE & REEL DESCRIPTION The NE76084S provides a low noise figure and high associated gain through 14 GHz. The NE76084S device is fabricated by ion implantation for improved RF and DC performance, reliability, and uniformity. The device features a recessed 0.3 micron gate and triple epitaxial technology. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. NOISE FIGURE AND ASSOCIATED G
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NE76084S Datasheet
