NE76084S mesfet equivalent, low noise l to ku band gaas mesfet.
* LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz
* HIGH ASSOCIATED GAIN GA = 9 dB TYP at f = 12 GHz
* LG = 0.3 µm, WG = 280 µm
* LOW COST METAL/CERAMIC PA.
The NE76084S provides a low noise figure and high associated gain through 14 GHz. The NE76084S device is fabricated by ion implantation for improved RF and DC performance, reliability, and uniformity. The device features a recessed 0.3 micron gate an.
Image gallery
TAGS
Download (Size : 42.24KB)