NE651R479A hj-fet equivalent, 0.4 w l-band power gaas hj-fet.
* GaAs HJ-FET structure
* High output power : Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = +13 dBm Pout = +27.0 dBm TYP. @ VDS = 3.5 V, .
for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power (CW) with high l.
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