NDL5522P diode equivalent, ingaas avalanche photo diode.
* Internal Si pre-amplifier IC
* High sensitivity
P =
–33 dBm TYP. @ 2.5 Gb/s, NRZ
* Wide dynamic range
Dr = 24 dB TYP. @ 2.5 Gb/s, NRZ
.
FEATURES
* Internal Si pre-amplifier IC
* High sensitivity
P =
–33 dBm TYP. @ 2.5 Gb/s, NRZ.
The NDL5522P is an InGaAs avalanche photo diode module with multimode fiber incorporating a silicon pre-
amplifier IC. It is designed as an optical receiver for fiber optic communications systems such as SDH, SONET, digital video transmission. It is .
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