K3435 datasheet, 2sk3435 equivalent, NEC

Features and benefits

* Super low on-state resistance: RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 40 A) 5 RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 40 A)
* Built-in gate protection diode 5.

Application

FEATURES
* Super low on-state resistance: RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 40 A) 5 RDS(on)2 = 22 mΩ MAX. (V.

Description

The 2SK3435 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES
* Super low on-state resistance: RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 40 A) 5 RDS(on)2 = 22 mΩ MAX. (VGS = 4.0 V, ID = 40 A)
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