K3060 datasheet, fet equivalent, NEC

Features and benefits

* Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = 35 A)
* Low Ciss: Ciss = 2400 pF TYP.
* Built.

Application

FEATURES
* Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V.

Description

The 2SK3060 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES
* Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = 35 A)
* Low Ciss:.

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