K2499 datasheet, 2sk2499 equivalent, NEC

Features and benefits

* Low On-Resistance RDS(on)1 = 9 mW (VGS = 10 V, ID = 25 A) RDS(on)2 = 14 mW (VGS = 4 V, ID = 25 A)
* Low Ciss Ciss = 3 400 pF TYP.
* High Avalanche Capabilit.

Application

FEATURES
* Low On-Resistance RDS(on)1 = 9 mW (VGS = 10 V, ID = 25 A) RDS(on)2 = 14 mW (VGS = 4 V, ID = 25 A)
*.

Description

The 2SK2499 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES
* Low On-Resistance RDS(on)1 = 9 mW (VGS = 10 V, ID = 25 A) RDS(on)2 = 14 mW (VGS = 4 V, ID = 25 A)
* Low Ciss Ciss = 3 400 pF TY.

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