K2480 datasheet, 2sk2480 equivalent, NEC

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Features and benefits

10.0±0.3
* Low On-Resistance RDS (on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A) 15.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 3±0.1 4±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain .

Application

PACKAGE DIMENSIONS (in millimeter) FEATURES 10.0±0.3
* Low On-Resistance RDS (on) = 4.0 Ω (VGS = 10 V, ID = 2.0 .

Description

The 2SK2480 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) FEATURES 10.0±0.3
* Low On-Resistance RDS (on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A) 15.0±0.3 3.2±0.2 4.5±0..

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