* Low On-Resistance RDS(on)1 = 80 mΩ MAX. (@ VGS = 10 V, ID = 10 A) RDS(on)2 = 0.1 Ω MAX. (@ VGS = 4 V, ID = 10 A)
* Low Ciss Ciss = 1400 pF TYP.
* Built-in G.

FEATURES
* Low On-Resistance RDS(on)1 = 80 mΩ MAX. (@ VGS = 10 V, ID = 10 A) RDS(on)2 = 0.1 Ω MAX. (@ VGS = 4 V, ID.

The 2SK2461 is N-Channel MOS Field Effect Transistor de- signed for high speed switching applications. FEATURES
* Low On-Resistance RDS(on)1 = 80 mΩ MAX. (@ VGS = 10 V, ID = 10 A) RDS(on)2 = 0.1 Ω MAX. (@ VGS = 4 V, ID = 10 A)
* Low Ciss Ciss.

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