K1658 2sk1658 equivalent, 2sk1658.
* Directly driven by ICs having a 3 V power supply.
* Has low Gate Leakage Current IGSS = ±5 nA MAX. (VGS = ±3.0 V)
G
0.9 ±0.1
Drain to Source Voltage (VGS = 0.
of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of ea.
The 2SK1658 is an N -channel vertical type MOS FET which can be driven by 2.5 V power supply. As the MOS FET is low Gate Leakage Current, it is suitable for appliances including Filter Circuit.
2.0 ±0.2 0.3 +0.1
–0 0.65 0.65
2.1 ±0.1 .
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