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J132-Z - MOS FIELD EFFECT POWER TRANSISTORS

Download the J132-Z datasheet PDF. This datasheet also covers the J132 variant, as both devices belong to the same mos field effect power transistors family and are provided as variant models within a single manufacturer datasheet.

Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Features

  • Gate drive available at logic level (VGS =.
  • 4 V).
  • High current control available in small dimension due to low RDS(on) (≅ 0.25 Ω).
  • 2SJ132-Z is a lead process product and is deal for mounting a hybrid IC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (J132-NEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number J132-Z
Manufacturer NEC
File Size 130.29 KB
Description MOS FIELD EFFECT POWER TRANSISTORS
Datasheet download datasheet J132-Z Datasheet

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Other Datasheets by NEC

Part Number Description
J132 MOS FIELD EFFECT POWER TRANSISTORS
J133 P-Channel Power MOSFET
J133-Z P-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ132, 2SJ132-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES • Gate drive available at logic level (VGS = −4 V) • High current control available in small dimension due to low RDS(on) (≅ 0.25 Ω) • 2SJ132-Z is a lead process product and is deal for mounting a hybrid IC. QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
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