D560 - SILICON POWER TRANSISTOR

NEC (now Renesas Electronics)

Key Features

C-to-E reverse diode inserted.
Low collector saturation voltage.

D560 silicon power transistor by NEC (now Renesas Electronics) - Datasheet Preview

Datasheet Details

Part number	D560
Manufacturer	NEC (now Renesas Electronics)
File Size	262.27 KB
Description	SILICON POWER TRANSISTOR
Datasheet	D560 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC output of devices such as pulse motor drivers and relay drivers, and PC terminals.