D4564163 Datasheet UPD4564163

Manufacturer: NEC (now Renesas Electronics)

D4564163 upd4564163 by NEC (now Renesas Electronics) - Datasheet Preview

Datasheet Details

Part number	D4564163
Manufacturer	NEC (now Renesas Electronics)
File Size	657.15 KB
Description	UPD4564163
Download	D4564163 Download (PDF)

General Description

The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 × 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 (word × bit × bank), respectively.

The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.

All inputs and outputs are synchronized with the positive edge of the clock.

Overview

DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441, 4564841, 4564163 64M-bit Synchronous DRAM 4-bank,.

Key Features

Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge.
Pulsed interface.
Possible to assert random column address in every cycle.
Quad internal banks controlled by A12 and A13 (Bank Select).
Byte control (×16) by LDQM and UDQM.
Programmable Wrap sequence (Sequential / Interleave).
Programmable burst length (1, 2, 4, 8 and full page).
Programmable /CAS latency (2 and 3).
Automatic prech.

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