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D4564163 Datasheet

Manufacturer: NEC (now Renesas Electronics)
D4564163 datasheet preview

Datasheet Details

Part number D4564163
Datasheet D4564163_NEC.pdf
File Size 657.15 KB
Manufacturer NEC (now Renesas Electronics)
Description UPD4564163
D4564163 page 2 D4564163 page 3

D4564163 Overview

The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive edge of the clock. The synchronous DRAMs are patible with Low Voltage TTL (LVTTL).

D4564163 Key Features

  • Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
  • Pulsed interface
  • Possible to assert random column address in every cycle
  • Quad internal banks controlled by A12 and A13 (Bank Select)
  • Byte control (×16) by LDQM and UDQM
  • Programmable Wrap sequence (Sequential / Interleave)
  • Programmable burst length (1, 2, 4, 8 and full page)
  • Programmable /CAS latency (2 and 3)
  • Automatic precharge and controlled precharge
  • CBR (auto) refresh and self refresh
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