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D45128841G5 Datasheet Upd45128841g5

Manufacturer: NEC (now Renesas Electronics)

Overview: www.DataSheet4U.com DATA SHEET MOS INTEGRATED CIRCUIT µPD45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank,.

General Description

The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively.

The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.

All inputs and outputs are synchronized with the positive edge of the clock.

Key Features

  • Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge.
  • Pulsed interface.
  • Possible to assert random column address in every cycle.
  • Quad internal banks controlled by BA0(A13) and BA1(A12).
  • Byte control (×16) by LDQM and UDQM.
  • Programmable Wrap sequence (Sequential / Interleave).
  • Programmable burst length (1, 2, 4, 8 and full page).
  • Programmable /CAS latency (2 and 3).
  • Automatic precharge.

D45128841G5 Distributor

More Datasheets from NEC (now Renesas Electronics)

Part Number Description
D45128163G5 UPD45128163G5
D45128441G5 UPD45128441G5
D4516161CG5 UPD4516161CG5
D4564163 UPD4564163