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D45128841G5 Datasheet

Manufacturer: NEC (now Renesas Electronics)
D45128841G5 datasheet preview

Datasheet Details

Part number D45128841G5
Datasheet D45128841G5_NEC.pdf
File Size 855.93 KB
Manufacturer NEC (now Renesas Electronics)
Description UPD45128841G5
D45128841G5 page 2 D45128841G5 page 3

D45128841G5 Overview

The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive edge of the clock. The synchronous DRAMs are patible with Low Voltage TTL (LVTTL).

D45128841G5 Key Features

  • Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
  • Pulsed interface
  • Possible to assert random column address in every cycle
  • Quad internal banks controlled by BA0(A13) and BA1(A12)
  • Byte control (×16) by LDQM and UDQM
  • Programmable Wrap sequence (Sequential / Interleave)
  • Programmable burst length (1, 2, 4, 8 and full page)
  • Programmable /CAS latency (2 and 3)
  • Automatic precharge and controlled precharge
  • CBR (Auto) refresh and self refresh
NEC (now Renesas Electronics) logo - Manufacturer

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