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  NEC Electronic Components Datasheet  

CE1A3Q Datasheet

COMPOUND TRANSISTOR

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DATA SHEET
COMPOUND TRANSISTOR
CE1A3Q
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
The CE1A3Q is a transistor of on-chip high hFE resistor
incorporating dumper diode in collector to emitter and zener diode
in collector to base as protect elements. This transistor is ideal for
actuator drives of OA equipments and electric equipments.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• On-chip zener diode for surge voltage absorption
• On-chip bias resistor: R1 = 1.0 k, R2 = 10 k
• Low power consumption during driving:
VOL = 0.12 V @VI = 5.0 V, IC = 0.5 A
• On-chip dumper diode for reverse cable
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Collector to base voltage
VCBO
60±10
Collector to emitter voltage
VCEO
60±10
Emitter to base voltage
VEBO
15
Collector current (DC)
IC(DC)
±2.0
Collector current (Pulse)
IC(pulse) *
±3.0
Base current (DC)
IB(DC)
0.03
Total power dissipation
PT
1.0
Junction temperature
Tj
150
Storage temperature
Tstg 55 to +150
* PW 10 ms, duty cycle 50 %
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Unit
V
V
V
A
A
A
W
°C
°C
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Colletor to emitter voltage
VCEO(SUS) IC = 2.0 A, IB = 5.0 Ma, L = 6.0 mH
50 60
Collector cutoff current
ICBO VCB = 40 V, IE = 0
100
DC current gain
hFE1 ** VCE = 5.0 V, IC = 0.2 A
700 1200
DC current gain
hFE2 ** VCE = 5.0 V, IC = 1.0 A
1000
1700
3000
DC current gain
hFE3 ** VCE = 5.0 V, IC = 2.0 A
500 1300
Low level output voltage
VOL ** VI = 5.0 V, IC = 0.5 A
0.12 0.3
Low level input voltage
VIL ** VCE = 12 V, IC = 100 µA
0.46 0.4
Input resistance 1
R1
0.7 1.0 1.3
Input resistance 2
R2
7.0 10.0 13.0
Turn-on time
ton IC = 1.0 A
0.4
Storage time
tstg IBI = IB2 = 10 mA
1.4
Fall time
tf VCC = 20 V, RL = 20
0.5
** Pulse test PW350 µs, duty cycle2 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Unit
V
nA
V
V
k
k
µs
µs
µs
Document No. D16177EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928


  NEC Electronic Components Datasheet  

CE1A3Q Datasheet

COMPOUND TRANSISTOR

No Preview Available !

TYPICAL CHARACTERISTICS (Ta = 25°C)
CE1A3Q
2 Data Sheet D16177EJ1V0DS


Part Number CE1A3Q
Description COMPOUND TRANSISTOR
Maker NEC
Total Page 4 Pages
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