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C5195 - 2SC5195

Key Features

  • Low Voltage Operation, Low Phase Distortion.
  • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz.
  • Large Absolute Maximum Collector Current IC = 100 mA.
  • Supercompact Mini Mold Package.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
C5191 2SC5191
C5194 2SC5194
C5177 2SC5177

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON TRANSISTOR 2SC5195 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Supercompact Mini Mold Package ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE 2SC5195 2SC5195-T1 In-bulk products (50 pcs.) Taped products (3 Kpcs/Reel) Embossed tape 8 mm wide. Pin 3 (Collector) face to perforation side of the tape. Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.