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  NEC Electronic Components Datasheet  

C4783 Datasheet

2SC4783

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DATA SHEET
NPN SILICON EPITAXIAL TRANSISTOR
2SC4783
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC4783 is NPN silicon epitaxial transistor.
FEATURES
High DC current gain: hFE2 = 200 TYP.
High voltage: VCEO = 50 V
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO 50 V
Emitter to Base Voltage
VEBO 5.0 V
Collector Current (DC)
Collector Current (pulse) Note1
Total Power Dissipation (TA = 25°C) Note2
IC(DC)
IC(pulse)
PT
100 mA
200 mA
200 mW
Junction Temperature
Tj 150 °C
Storage Temperature Range
Tstg –55 to + 150 °C
Notes 1. PW 10 ms, Duty Cycle 50%
2. When mounted on ceramic substrate of 3.0 cm2 x 0.64 mm
PACKAGE DRAWING (Unit: mm)
0.3 ± 0.05
0.1
+0.1
–0.05
3
2
0.2
+0.1
–0
1
0.5 0.5
1.0
1.6 ± 0.1
1: Emitter
2: Base
3: Collector
0 to 0.1
0.6
0.75 ± 0.05
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Collector Cut-off Current
ICBO VCB = 60 V, IE = 0
Emitter Cut-off Current
DC Current Gain Note
IEBO VEB = 5.0 V, IC = 0
hFE1 VCE = 6.0 V, IC = 0.1 mA
Base to Emitter Voltage Note
Collector Saturation Voltage Note
Base Saturation Voltage Note
hFE2
VBE
VCE(sat)
VBE(sat)
VCE = 6.0 V, IC = 1.0 mA
VCE = 6.0 V, IC = 1.0 mA
IC = 100 mA, IB = 10 mA
IC = 100 mA, IB = 10 mA
Gain Bandwidth Product
fT VCE = 6.0 V, IE = 10 mA
Output Capacitance
Cob VCE = 6.0 V, IE = 0, f = 1.0 MHz
Note Pulsed: PW 350 µs, Duty Cycle 2%
MIN. TYP. MAX. UNIT
100 nA
100 nA
50
90 200 600
0.62 V
0.15 0.3 V
0.86 1.0 V
150 250
MHz
3.0 4.0 pF
hFE CLASSFICATION
Marking
L4
hFE2 90 to 180
L5
135 to 270
L6
200 to 400
L7
300 to 600
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15616EJ1V0DS00 (1st edition)
Date Published July 2001 NS CP(K)
Printed in Japan
©
2001


  NEC Electronic Components Datasheet  

C4783 Datasheet

2SC4783

No Preview Available !

2SC4783
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
300
Free air
250
200
150
100
When mounted on ceramic substrate of 3.0 cm 2
50 x 0.64 mm
0
25 50
75 100 125 150
TA - Ambient Temperature - ˚C
COLLECTOR CURRENT vs. COLLECTOR TO
EMITTER VOLTAGE
100
1.0
0.9
0.8
80
0.7
0.6
0.5
0.4
60 0.3
40 0.2
IB = 0.1 mA
20
0 0.5 1.0 1.5 2.0
VCE - Collector to Emitter Voltage - V
COLLECTOR AND BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
1
VBE(sat)
0.5
0.2
0.1
0.05
VCE(sat)
0.02
0.01
1
.IC = 10 IB
2
5 10 20
50 100
IC - Collector Current - mA
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 6.0 V
30
10
3
1
0.3
0.1
0.03
0.01
0.4
0.5 0.6 0.7 0.8 0.9
VBE - Base to Emitter Voltage - V
1.0
COLLECTOR CURRENT vs. COLLECTOR TO
EMITTER VOLTAGE
10 45
40
8 35
30
6 25
20
4 15
10
2
IB = 5.0 µA
0 10 20 30 40 50
VCE - Collector to Emitter Voltage - V
OUTPUT CAPACITANCE vs. REVERSE VOLTAGE
10
f = 1.0 MHz
5
2
1
0.5
0.2
0.1
12
5 10 20
50 100
VCB - Collector to Base Voltage - V
2 Data Sheet D15616EJ1V0DS


Part Number C4783
Description 2SC4783
Maker NEC
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C4783 Datasheet PDF






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