C4783
DESCRIPTION
The 2SC4783 is NPN silicon epitaxial transistor.
PACKAGE DRAWING (Unit: mm)
0.3 ± 0.05 0.1 +0.1
- 0.05
FEATURES
1.6 ± 0.1 0.8 ± 0.1
- High DC current gain: h FE2 = 200 TYP.
- High voltage: VCEO = 50 V
3 0 to 0.1 2 0.2 +0.1
- 0 0.5 0.5 1.0 1.6 ± 0.1 0.6 0.75 ± 0.05 1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse)
Note1 Note2
VCBO VCEO VEBO IC(DC) IC(pulse) PT Tj Tstg
60 50 5.0 100 200 200 150
- 55 to + 150
V V V m A m A m W °C °C
Total Power Dissipation (TA = 25°C) Junction Temperature Storage Temperature Range
1: Emitter 2: Base 3: Collector
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2 2. When mounted on ceramic substrate of 3.0 cm x 0.64 mm
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS Collector Cut-off Current Emitter Cut-off Current DC Current Gain
Note
SYMBOL ICBO IEBO h FE1 h FE2
TEST CONDITIONS VCB = 60 V, IE = 0 VEB = 5.0 V, IC = 0 VCE = 6.0...
