C4554
features large current switching at a low power dissipation. In addition, a high h FE enables alleviation of the driver load.
FEATURES
- High h FE and low VCE(sat): h FE ≅ 800 (VCE = 2 V, IC = 5 A) VCE(sat) ≅ 0.12 V (IC = 5 A, IB = 0.05 A)
- On-chip C to E damper diode
- Mold package that does not require an insulating board or insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)- IB(DC) PT (Tc = 25°C) PT (Ta = 25°C) Tj Tstg Ratings 100 100 7.0 ±15 ±22 4.0 35 2.0 150
- 55 to +150 Unit V V V A A A W W °C °C
Electrode Connection 1. Base 2. Collector 3. Emitter
EQUIVALENT CIRCUIT
- PW ≤ 10 ms, duty cycle ≤ 50%
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