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  NEC Electronic Components Datasheet  

C4553 Datasheet

2SC4553

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DATA SHEET
SILICON POWER TRANSISTOR
2SC4553
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SC4553 is a power transistor designed especially for low
collector saturation voltage and features large current switching at a
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low power dissipation. In addition, a high hFE enables alleviation of
the driver load.
FEATURES
• High hFE and low VCE(sat):
hFE 800 (VCE = 2 V, IC = 3 A)
VCE(sat) 0.12 V (IC = 3 A, IB = 0.03 A)
• On-chip C to E damper diode
• Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)*
Base current (DC)
Total power dissipation
IB(DC)
PT (Tc = 25°C)
Total power dissipation
PT (Ta = 25°C)
Junction temperature
Tj
Storage temperature
Tstg
* PW 10 ms, duty cycle 50%
Ratings
100
100
7.0
±7.5
±10
2.0
30
2.0
150
55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
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 (PLWWHU
(48,9$/(17 &,5&8,7
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15599EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928


  NEC Electronic Components Datasheet  

C4553 Datasheet

2SC4553

No Preview Available !

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ELECTRICAL CHARACTERISTICS (Ta = 25°C)
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2 Data Sheet D15599EJ2V0DS


Part Number C4553
Description 2SC4553
Maker NEC
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C4553 Datasheet PDF






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