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  NEC Electronic Components Datasheet  

C4551 Datasheet

NPN SILICON EPITAXIAL TRANSISTOR

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DATA SHEET
SILICON POWER TRANSISTOR
2SC4551
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SC4551 is a power transistor developed for high-speed
switching and features low VCE(sat) and high hFE. This transistor is
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ideal for use in drivers such as DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
• High hFE and low VCE(sat):
hFE 100 (VCE = 2 V, IC = 2 A)
VCE(sat) 0.3 V (IC = 6 A, IB = 0.3 A)
• Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)*
Base current (DC)
IB(DC)
Total power dissipation
PT (Tc = 25°C)
Total power dissipation
PT (Ta = 25°C)
Junction temperature
Tj
Storage temperature
Tstg
* PW 300 µs, duty cycle 10%
Ratings
100
60
7.0
10
20
5.0
30
2.0
150
55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15597EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928


  NEC Electronic Components Datasheet  

C4551 Datasheet

NPN SILICON EPITAXIAL TRANSISTOR

No Preview Available !

2SC4551
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector to emitter voltage
Collector to emitter voltage
VCEO(SUS)
VCEX(SUS)
IC = 6.0 A, IB = 0.6 A, L = 1 mH
IC = 6.0 A, IB1 = IB2 = 0.6 A,
VBE(OFF) = 1.5 V, L = 180 µH, clamped
Collector cutoff current
Collector cutoff current
Collector cutoff current
Collector cutoff current
ICBO
ICER
ICEX1
ICEX2
VCB = 60 V, IE = 0
VCE = 60 V, RBE = 50 , Ta = 125°C
VCE = 60 V, VBE(OFF) = 1.5 V
VCE = 60 V, VBE(OFF) = 1.5 V,
Ta = 125°C
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DC current gain
IEBO
hFE1*
VEB = 5.0 V, IC = 0
VCE = 2.0 V, IC = 1.0 A
DC current gain
hFE2* VCE = 2.0 V, IC = 2.0 A
DC current gain
hFE3* VCE = 2.0 V, IC = 6.0 A
Collector saturation voltage VCE(sat)1* IC = 6.0 A, IB = 0.3 A
Collector saturation voltage VCE(sat)2* IC = 8.0 A, IB = 0.4 A
Base saturation voltage
VBE(sat)1* IC = 6.0 A, IB = 0.3 A
Base saturation voltage
VBE(sat)2* IC = 8.0 A, IB = 0.4 A
Collector capacitance
Cob VCB = 10 V, IE = 0, f = 1.0 MHz
Gain bandwidth product
fT VCE = 10 V, IC = 1.0 A
Turn-on time
Storage time
Fall time
ton IC = 6.0 A, RL = 8.3 ,
tstg IB1 = IB2 = 0.3 A, VCC 50 V
Refer to the test circuit.
tf
* Pulse test PW 350 µs, duty cycle 2%
hFE CLASSIFICATION
Marking
hFE2
M
100 to 200
L
150 to 300
K
200 to 400
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
MIN.
60
60
TYP.
MAX.
Unit
V
V
10 µA
1.0 mA
10 µA
1.0 mA
10 µA
100
100 200 400
60
0.3 V
0.5 V
1.2 V
1.5 V
150 pF
140 MHz
0.3 µs
1.5 µs
0.3 µs
Base current
waveform
Collector current
waveform
2 Data Sheet D15597EJ2V0DS


Part Number C4551
Description NPN SILICON EPITAXIAL TRANSISTOR
Maker NEC
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C4551 Datasheet PDF






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