DATA SHEET
SILICON POWER TRANSISTOR
2SC4342
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
DESCRIPTION
The 2SC4342 is a high-speed Darlington power transistor.
This transistor is ideal for high-precision control such as PWM
control for pulse motors or blushless of OA and FA equipment.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SC4342
TO-126 (MP-5)
FEATURES
• On-chip C-to-E reverse diode
• Fast switching speed
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
Collector Current (pulse)
IC(DC)
IC(pulse) Note
Base Current (DC)
IB(DC)
Total Power Dissipation (TA = 25°C)
PT1
Total Power Dissipation (TC = 25°C)
PT2
Junction Temperature
Tj
Storage Temperature
Tstg
Note PW ≤ 10 ms, Duty Cycle ≤ 50%
150
100
8.0
±3.0
±5.0
0.3
1.3
12
150
−55 to +150
V
V
V
A
A
A
W
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14862EJ3V0DS00 (3rd edition)
Date Published July 2004 NS CP(K)
Printed in Japan
The mark ★ shows major revised points.
2002
