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  NEC Electronic Components Datasheet  

C4342 Datasheet

NPN SILICON EPITAXIAL TRANSISTOR

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DATA SHEET
SILICON POWER TRANSISTOR
2SC4342
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
DESCRIPTION
The 2SC4342 is a high-speed Darlington power transistor.
This transistor is ideal for high-precision control such as PWM
control for pulse motors or blushless of OA and FA equipment.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SC4342
TO-126 (MP-5)
FEATURES
On-chip C-to-E reverse diode
Fast switching speed
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
Collector Current (pulse)
IC(DC)
IC(pulse) Note
Base Current (DC)
IB(DC)
Total Power Dissipation (TA = 25°C)
PT1
Total Power Dissipation (TC = 25°C)
PT2
Junction Temperature
Tj
Storage Temperature
Tstg
Note PW 10 ms, Duty Cycle 50%
150
100
8.0
±3.0
±5.0
0.3
1.3
12
150
55 to +150
V
V
V
A
A
A
W
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14862EJ3V0DS00 (3rd edition)
Date Published July 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2002


  NEC Electronic Components Datasheet  

C4342 Datasheet

NPN SILICON EPITAXIAL TRANSISTOR

No Preview Available !

2SC4342
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
Collector Cut-off Current
ICBO VCB = 100 V, IE = 0 A
Emitter Cut-off Current
DC Current Gain Note
IEBO VEB = 5.0 V, IC = 0 A
hFE1 VCE = 2.0 V, IC = 1.5 A
2000
Collector Saturation Voltage Note
Base Saturation Voltage Note
hFE2
VCE(sat)
VBE(sat)
VCE = 2.0 V, IC = 3.0 A
IC = 1.5 A, IB = 1.5 mA
IC = 1.5 A, IB = 1.5 mA
1000
Turn-on Time
ton IC = 1.5 A, RL = 33
Storage Time
tstg IB1 = IB2 = 3.0 mA, VCC 50 V
Fall Time
tf Refer fo the switching time (ton, tstg, tf)
test circuit
Note Pulsed test PW 350 µs, Duty Cycle 2%
TYP.
MAX.
1.0
5.0
20000
UNIT
µA
mA
1.5 V
2.0 V
0.3 µs
1.5 µs
0.4 µs
hFE CLASSIFICATION
Marking
hFE1
M
2000 to 5000
L
4000 to 10000
K
8000 to 20000
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
VIN
PW
PW =. . 50 µs
Duty Cycle 2%
RL
IC
IB1
IB2 T.U.T.
VBB .=. 5.0 V
Base current
waveform
VCC
IB2
IB1
Collector current
90%
waveform
IC
10%
ton tstg tf
2 Data Sheet D14862EJ3V0DS


Part Number C4342
Description NPN SILICON EPITAXIAL TRANSISTOR
Maker NEC
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C4342 Datasheet PDF






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