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C2690 - NPN SILICON EPITAXIAL TRANSISTOR

Description

These products are general purpose transistors designed for use in audio and radio frequency power amplifiers.

Features

  • Suitable for use in driver stage of 50 to 100 W audio amplifiers and output stage of TV vertical deflection circuit.
  • High voltage and high fT VCEO = 120 V (2SC2690) / 160 V (2SC2690A) fT = 175 MHz (VCE = 5.0 V, IC = 0.2 A).
  • Complementary to the 2SA1220 and 2SA1220A PNP transistors.

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Datasheet Details

Part number C2690
Manufacturer NEC
File Size 1.52 MB
Description NPN SILICON EPITAXIAL TRANSISTOR
Datasheet download datasheet C2690 Datasheet

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Other Datasheets by NEC

Part Number Description
C2690A NPN SILICON EPITAXIAL TRANSISTOR

Full PDF Text Transcription

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DATA SHEET SILICON POWER TRANSISTOR 2SC2690,2690A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW/HIGH FREQUENCY POWER AMPLIFICATION DESCRIPTION These products are general purpose transistors designed for use in audio and radio frequency power amplifiers. FEATURES • Suitable for use in driver stage of 50 to 100 W audio amplifiers and output stage of TV vertical deflection circuit. • High voltage and high fT VCEO = 120 V (2SC2690) / 160 V (2SC2690A) fT = 175 MHz (VCE = 5.0 V, IC = 0.2 A) • Complementary to the 2SA1220 and 2SA1220A PNP transistors. ORDERING INFORMATION PART NUMBER PACKAGE 2SC2690 2SC2690-AZ Note TO-126 (MP-5) TO-126 (MP-5) 2SC2690A TO-126 (MP-5) 2SC2690A-AZ Note TO-126 (MP-5) Note Pb-free (This product does not contain Pb in external electrode.
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