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A2790GR - UPA2790GR

General Description

The µ PA2790GR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application.

Key Features

  • Low on-state resistance N-channel RDS(on)1 = 28 mΩ MAX. (VGS = 10 V, ID = 3 A) 1.8 Max. RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID = 3 A) P-channel RDS(on)1 = 60 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 3 A) RDS(on)2 = 80 mΩ MAX. (VGS =.
  • 4.5 V, ID =.
  • 3 A).
  • Low input capacitance N-channel Ciss = 500 pF TYP. P-channel Ciss = 460 pF TYP. 1 4 +0.05.
  • 0.10 5.37 Max. 4.0 1.0 0.20 0.10 Min. 0.6 1.27 0.12 M 0.40 +0.11.
  • 0.05 0.5 ±0.2 0.10.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2790GR SWITCHING N- AND P-CHANNEL POWER MOS FET DESCRIPTION The µ PA2790GR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application. 8 PACKAGE DRAWING (Unit: mm) 5 N-channel 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 P-channel 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 6.0 ±0.3 FEATURES • Low on-state resistance N-channel RDS(on)1 = 28 mΩ MAX. (VGS = 10 V, ID = 3 A) 1.8 Max. RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID = 3 A) P-channel RDS(on)1 = 60 mΩ MAX. (VGS = −10 V, ID = −3 A) RDS(on)2 = 80 mΩ MAX. (VGS = −4.5 V, ID = −3 A) • Low input capacitance N-channel Ciss = 500 pF TYP. P-channel Ciss = 460 pF TYP. 1 4 +0.05 –0.10 5.37 Max. 4.0 1.0 0.20 0.10 Min. 0.6 1.27 0.12 M 0.40 +0.11 –0.05 0.5 ±0.2 0.