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2SK3484 - SWITCHING N-CHANNEL POWER MOSFET

General Description

The 2SK3484 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Low on-state resistance RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 8 A).
  • Low Ciss: Ciss = 900 pF TYP.
  • Built-in gate protection diode.
  • TO-251/TO-252 package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3484 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3484 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 8 A) • Low Ciss: Ciss = 900 pF TYP.