* Low on-state resistance RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 8 A)
* Low Ciss: Ciss = 900 pF TYP.
* Built-.

FEATURES
* Low on-state resistance RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 .

The 2SK3484 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES
* Low on-state resistance RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 8 A)
* Low Ciss:.

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