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2SK3482 - SWITCHING N-CHANNEL POWER MOSFET

General Description

The 2SK3482 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 18 A).
  • Low Ciss: Ciss = 3600 pF TYP.
  • Built-in gate protection diode.
  • TO-251/TO-252 package (TO-251).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3482 SWITCHING N-CHANNEL POWER MOS FET www.DataSheet4U.com DESCRIPTION The 2SK3482 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3482 2SK3482-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z) FEATURES • Low on-state resistance RDS(on)1 = 33 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 39 mΩ MAX. (VGS = 4.5 V, ID = 18 A) • Low Ciss: Ciss = 3600 pF TYP. • Built-in gate protection diode • TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 100 ±20 ±36 ±100 50 1.