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2SK3481 - SWITCHING N-CHANNEL POWER MOSFET

General Description

The 2SK3481 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 58 mΩ MAX. (VGS = 4.5 V, ID = 15 A).
  • Low Ciss: Ciss = 2300 pF TYP.
  • Built-in gate protection diode Note TO-220SMD package is produced only in Japan. (TO-220AB).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT www.DataSheet4U.com TRANSISTOR 2SK3481 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3481 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3481 2SK3481-S 2SK3481-ZJ 2SK3481-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote FEATURES • Super low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 58 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low Ciss: Ciss = 2300 pF TYP. • Built-in gate protection diode Note TO-220SMD package is produced only in Japan.