Datasheet4U Logo Datasheet4U.com

2SK3062 - N-Channel MOSFET

General Description

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 12 mΩ MAX. (VGS = 4.0 V, ID = 35 A).
  • Low Ciss: Ciss = 5200 pF TYP.
  • Built-in gate protection diode.

📥 Download Datasheet

Datasheet Details

Part number 2SK3062
Manufacturer NEC
File Size 69.94 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK3062 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3064 N-Channel MOSFET Panasonic Semiconductor
2SK3065 N-Channel MOSFET Rohm
2SK3067 N-Channel MOSFET Toshiba Semiconductor
2SK3068 N-Channel MOSFET Toshiba Semiconductor
2SK3069 N-Channel MOSFET Hitachi Semiconductor

Other Datasheets by NEC

Part Number Description
2SK3060 N-CHANNEL POWER MOS FET
2SK3061 N-Channel MOSFET
2SK3053 N-Channel MOSFET
2SK3054 N-Channel MOSFET
2SK3055 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3062 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3062 2SK3062-S 2SK3062-ZJ PACKAGE TO-220AB TO-262 TO-263 DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 12 mΩ MAX. (VGS = 4.0 V, ID = 35 A) • Low Ciss: Ciss = 5200 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse) Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg 60 ±20 +20, −10 ±70 ±280 100 1.