2SK3053 Datasheet | NEC

DESCRIPTION The 2SK3053 is N-Channel MOS Field Effect Transistor designed for high current switching applications in consumer instruments. ORDERING INFORMATION PART NUMBER 2SK3053 PACKAGE Isolated TO-220 FEATURES - Low On-State Resistance RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 13 A) RDS(on)2 = 70 mΩ MAX. (VGS = 4.0 V, ID = 13 A) - Low Ciss : Ciss = 790 p F TYP. - Built-in Gate Protection Diode - Isolated TO-220 package (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg Note2 Note2 60 ±20 +20, - 10 ±25 ±75 30 2.0 150 - 55 to +150 12.5 15.6 V V V A A W W °C °C A m J Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy IAS EAS Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % ! 2. Starting Tch = 25 °C, VDD = 30 V, RG = 25 Ω, VGS = 20 V → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D12912EJ3V0DS00 (3rd edition) Date Published May 2001 NS CP(K) Printed in Japan The mark ! shows major revised points. © 1999, 2000 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 13 A VGS = 4.0 V, ID = 13 A VDS = 10 V, ID = 1 m A VDS = 10 V, ID = 13 A VDS = 60 V, VGS = 0...