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2SJ598 - P-Channel MOSFET

Description

The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.

Features

  • Low on-state resistance: RDS(on)1 = 130 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 6 A) RDS(on)2 = 190 mΩ MAX. (VGS =.
  • 4.0 V, ID =.
  • 6 A).
  • Low Ciss: Ciss = 720 pF TYP.
  • Built-in gate protection diode.
  • TO-251/TO-252 package.

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Datasheet Details

Part number 2SJ598
Manufacturer NEC
File Size 157.83 KB
Description P-Channel MOSFET
Datasheet download datasheet 2SJ598 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ598 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 130 mΩ MAX. (VGS = –10 V, ID = –6 A) RDS(on)2 = 190 mΩ MAX. (VGS = –4.0 V, ID = –6 A) • Low Ciss: Ciss = 720 pF TYP.
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